SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat

Keisuke Kurashima; Masaya Hayashi; Hitoshi Habuka; Hideki Ito; Shin Ichi Mitani; Yoshinao Takahashi

doi:10.4028/www.scientific.net/MSF.1004.186

Paper Titles

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size
p.161

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
p.167

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
p.173

Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides
p.180

SiC Epitaxial Reactor Cleaning by ClF₃ Gas with the Help of Reaction Heat
p.186

Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals
p.193

A New Permanganate-Free Slurry for GaN-SiC CMP Applications
p.199

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition
p.206

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
p.215

HomeMaterials Science ForumMaterials Science Forum Vol. 1004SiC Epitaxial Reactor Cleaning by ClF3 Gas with...

SiC Epitaxial Reactor Cleaning by ClF₃ Gas with the Help of Reaction Heat

Abstract:

A silicon carbide epitaxial reactor cleaning process was designed accounting for the exothermic reaction heat between silicon carbide and chlorine trifluoride gas. To avoid the peeling of the susceptor surface coating film, the spontaneous temperature increase due to the exothermic reaction heat was moderated by adding the nitrogen gas. The particle-type silicon carbide deposition could be effectively removed without causing any damage of susceptor.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

186-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.186

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Online since:

July 2020

Authors:

Keisuke Kurashima, Masaya Hayashi, Hitoshi Habuka*, Hideki Ito, Shin Ichi Mitani, Yoshinao Takahashi

Keywords:

Chlorine Trifluoride, Epitaxial Growth, Purified Pyrolytic Carbon, Reactor Cleaning

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References

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