Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen

Kenta Irikura; Ryohei Kawasaki; Hitoshi Habuka; Yoshinao Takahashi; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.1004.173

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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Etching Rate Profile of C-Face 4H-SiC Wafer...

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen

Abstract:

A 50-mm diameter silicon carbide wafer thinning technique by means of a chemical reaction using a chlorine trifluoride (ClF₃) gas was studied accounting for the gas distributor design and the total gas flow rate. The entire etching depth profile could become uniform with the increasing total gas flow rate at the fixed chlorine trifluoride gas concentration. A relationship between the pinhole arrangement of the gas distributor and the local etching rate profile was clarified by comparing the quick calculation and the measurement.

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Materials Science Forum (Volume 1004)

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173-179

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https://doi.org/10.4028/www.scientific.net/MSF.1004.173

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Online since:

July 2020

Authors:

Kenta Irikura, Ryohei Kawasaki, Hitoshi Habuka*, Yoshinao Takahashi, Tomohisa Kato

Keywords:

C-Face SiC, Chlorine Trifluoride Gas, Wafer Etching

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