Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

Oleg Rusch; Carsten Hellinger; Jonathan Moult; Yunji L. Corcoran; Tobias Erlbacher

doi:10.4028/www.scientific.net/MSF.1004.155

Paper Titles

Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC
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Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
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Mono-Versus Poly-Crystalline SiC for Nuclear Applications
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Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations
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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
p.155

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size
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Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
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Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
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Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Reducing On-Resistance for SiC Diodes by Thin...

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

Abstract:

This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (V_F) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 μA at 650 V nominal voltage. On-resistance (R_ON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

155-160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.155

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Online since:

July 2020

Authors:

Oleg Rusch*, Carsten Hellinger, Jonathan Moult, Yunji L. Corcoran, Tobias Erlbacher

Keywords:

4H-SiC, Facet Region, Junction Barrier Schottky (JBS), Laser Annealing, Merged PiN-Schottky (MPS), Substrate Resistivity, Wafer Thinning

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References

[1] T. Kimoto, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications, IEEE Press, Wiley, Singapore (2014).

Google Scholar

[2] B. Heinze and J. Lutz, Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes, in Proceedings of the 20th International Symposium on Power Semiconductor Devices & IC's (Orlando, FL, 2008) pp.245-248.

DOI: 10.1109/ispsd.2008.4538944

Google Scholar

[3] R. Rupp, R. Gerlach, U. Kirchner, A. Schlögl and R. Kern, Performance of a 650V SiC diode with reduced chip thickness, Material Science Forum, Vols. 717-220 (2012) pp.921-924.

DOI: 10.4028/www.scientific.net/msf.717-720.921

Google Scholar

[4] R. Rupp, R. Kern and R. Gerlach, Laser backside contact annealing of SiC Power devices: A Prerequisite for SiC thin wafer technology, in Proceedings of the 25th International Symposium on Power Semiconductor Devices & IC's (Kanazawa, Japan, 2013) pp.245-248.

DOI: 10.1109/ispsd.2013.6694396

Google Scholar

[5] Y. Jung and J. Kim, Formation of Ni-silicide at the interface of Ni/4H-SiC, Journal of the Electrochemical Society, 158 (2011) pp.551-553.

DOI: 10.1149/1.3567531

Google Scholar

[6] P. Berwian . D. Kaminzky, K. Roßhirt, V. Kallinger, J. Friedrich, S. Oppel, A. Schneider and M. Schütz, Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence, Solid State Phenomena Vol 242 (2015) pp.484-489.

DOI: 10.4028/www.scientific.net/ssp.242.484

Google Scholar

[7] J. Lutz, H. Schlangenotto, U. Scheuermann, R. De Doncker, Semiconductor Power Devices Physics, Characteristics, Reliability, Springer-Verlag Berlin Heidelberg (2011).

DOI: 10.1007/978-3-642-11125-9

Google Scholar