Paper Titles

Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals
p.193

A New Permanganate-Free Slurry for GaN-SiC CMP Applications
p.199

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition
p.206

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
p.215

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
p.224

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons
p.231

Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCV)
p.237

Wurtzite SiC Formation in Plastic Deformed 3C and 6H
p.243

Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation
p.249

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Anomalous Conduction between the Band and...

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Article Preview

Abstract:

We measure the temperature-dependent resistivity (ρ(T)) for thick heavily Al- and Ncodoped p-type 4H-SiC samples grown by chemical vapor deposition (CVD), physical vapor transport (PVT), and solution growth (SG), and investigate their conduction mechanisms. For samples with an Al concentration (CAl) of 3.5×10¹⁹ to 1×10²⁰ cm^-3 grown by CVD, PVT, and SG, the conduction mechanisms at high and low temperatures are band and nearest-neighbor hopping (NNH) conduction, respectively. In the range C_Al of 1×10¹⁹ to 3.5×10¹⁹ cm^-3, on the other hand, an anomalous conduction, referred to as X conduction here, is observed between the band and NNH conduction regions for the samples grown by CVD and PVT, but not those grown by SG. One of the differences between the samples grown by CVD and PVT and those grown by SG is the off-orientation toward [11-20] of the (0001) 4H-SiC substrate. We discuss the reason for the appearance of X conduction, which appears to be consistent with dopant-concentration inhomogeneity model.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2019

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

224-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.224

Citation:

Cite this paper

Online since:

July 2020

Authors:

Atsuki Hidaka*, Akinobu Takeshita, Kohei Ogawa, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Hideharu Matsuura, Shi Yang Ji, Kazuma Eto, Takeshi Mitani, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura

Keywords:

Chemical Vapor Deposition, Codoped 4H-SiC, Heavily Al- and N-Codoped 4H-SiC, Heavily Al-Doped 4H-SiC, Physical Vapor Transport, P-Type 4H-SiC, Solution Growth, Temperature-Dependent Resistivity

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2020 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] T. Miyazawa, S.Y. Ji, K. Kojima, Y. Ishida, K. Nakayama, A. Tanaka, K. Asano and H. Tsuchida: Mater. Sci. Forum Vol. 778780 (2014), p.135.

[2] S.Y. Ji, K. Kojima, Y. Ishida, S. Saito, H. Yamaguchi, S. Yoshida, H. Tsuchida and H. Okumura: Jpn. J. Appl. Phys. Vol. 54 (2015), p. 04DP08.

DOI: 10.7567/jjap.54.04dp08

[3] S.Y. Ji, K. Kojima, Y. Ishida, H. Tsuchida, S. Yoshida and H. Okumura: Mater. Sci. Forum Vol. 740742 (2013), p.181.

[4] S.Y. Ji, K. Kojima, Y. Ishida, S. Saito, T. Kato, H. Tsuchida, S. Yoshida and H. Okumura: J. Crystal Growth Vol. 380 (2013), 85.

[5] A.O. Evwaraye, S. R. Smith, W. C. Mitchel and M. D. Roth: Appl. Phys. Lett. Vol. 68 (1996), p.3159.

[6] M. Krieger, K. Semmelroth and G. Pensl: Mater. Sci. Forum Vol. 457460 (2004), p.685.

[7] M. Krieger, K. Semmelroth, H. B. Weber, G. Pensl, M. Rambach and L. Frey: Mater. Sci. Forum Vol. 556557 (2007), p.367.

DOI: 10.4028/www.scientific.net/msf.556-557.367

[8] S.Y. Ji, K. Eto, S. Yoshida, K. Kojima, Y. Ishida, S. Saito, H. Tsuchida and H. Okumura: Appl. Phys. Express Vol. 8 (2015), p.121302.

DOI: 10.7567/apex.8.121302

[9] H. Matsuura, A. Takeshita, T. Imamura, K. Takano, K. Okuda, A. Hidaka, S.Y. Ji, K. Eto, K. Kojima, T. Kato, S. Yoshida and H. Okumura: Mater. Sci. Forum Vol. 924 (2018), p.188.

DOI: 10.4028/www.scientific.net/msf.924.188

[10] H. Matsuura, A. Takeshita, T. Imamura, K. Takano, K. Okuda, A. Hidaka, S.Y. Ji, K. Eto, K. Kojima, T. Kato, S. Yoshida and H. Okumura: Applied Physics Express Vol. 11 (2018), p.101302.

DOI: 10.7567/apex.11.101302

[11] H. Matsuura, R. Nishihata, A. Takeshita, T. Imamura, K. Takano, K. Okuda, A. Hidaka, S.Y. Ji, K. Eto, K. Kojima, T. Kato, S. Yoshida and H. Okumura: Mater. Sci. Forum Vol. 963 (2019), p.324.

DOI: 10.4028/www.scientific.net/msf.963.324

[12] H. Matsuura, A. Takeshita, T. Imamura, K. Takano, K. Okuda, A. Hidaka, S.Y. Ji, K. Eto, K. Kojima, T. Kato, S. Yoshida and H. Okumura: Jpn. J. Appl. Phys. Vol. 58 (2019), p.098004.

DOI: 10.7567/1347-4065/ab3c2c

[13] S.Y. Ji, K. Kojima, Y. Ishida, S. Saito, H. Yamaguchi, S. Yoshida, H. Tsuchida, and H. Okumura: Jpn. J. Appl. Phys. Vol. 54 (2015), p. 04DP08.

DOI: 10.7567/jjap.54.04dp08

[14] T. Mitani, N. Komatsu, T. Takahashi, T. Kato, K. Fujii, T. Ujihara, Y. Matsumoto, K. Kurashige, and H. Okumura: J. Crystal Growth Vol. 401 (2014), p.681.

DOI: 10.1016/j.jcrysgro.2013.11.031

[15] T. Mitani, N. Komatsu, T. Takahashi, T. Kato, T. Ujihara, Y. Matsumoto, K. Kurashige, and H. Okumura: Mater. Sci. Forum Vol. 821823 (2015), p.9.

[16] K. Eto, H. Suo, T. Kato, and H. Okumura: J. Crystal Growth Vol. 470 (2017), p.154.

[17] B. I. Shklovskii and A. L. Efros: Electronic Properties of Doped Semiconductors (Springer Verlag, Berlin, 1984).