Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al

Gabriel Ferro; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.1004.96

Paper Titles

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications
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Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool
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Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool
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Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process
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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
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Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
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Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth
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3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress
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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Revisiting the Site-Competition Doping of 4H-SiC:...

Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al

Abstract:

Because the well-known site-competition and step-controlled epitaxy rules cannot reasonably describe all the incorporation processes of the main impurities (Al and N) into 4H-SiC during epitaxy, the concept of replacement incorporation was proposed and applied to explain the experimental results published so far. In this model, the transient formation of C or Si vacancies at the surface or sub-surface of terraces is proposed to play a key role by destabilizing the impurities sitting on them. In addition to the availability of these vacancies at the surface, desorption was proposed to be a very important limiting process for Al incorporation while only occasionally relevant for N incorporation. The main 4H-SiC epitaxial growth parameters are reviewed and discussed according to the proposed replacement model.

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Materials Science Forum (Volume 1004)

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96-101

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.96

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Online since:

July 2020

Authors:

Gabriel Ferro*, Didier Chaussende

Keywords:

Aluminum, Doping, Epitaxy, Model, Nitrogen, Vacancy

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