Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool

Yoshiaki Daigo; Akio Ishiguro; Shigeaki Ishii; Takehiko Kobayashi; Yoshikazu Moriyama

doi:10.4028/www.scientific.net/MSF.1004.78

Paper Titles

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC
p.51

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
p.57

X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates
p.63

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications
p.71

Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool
p.78

Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool
p.84

Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process
p.91

Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
p.96

Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
p.102

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Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool

Abstract:

N-type 4H-SiC homo-epitaxial films were grown on 150 mm diameter wafers by high speed wafer rotation vertical CVD tool, and effect of surface C/Si ratio on short-term and long-term repeatability of the SiC films was investigated. By tuning of growth condition, high uniform SiC film with in-wafer thickness uniformity of ±2.8 % (1.6 % σ/mean) and carrier concentration uniformity of ±3.1 % (1.9 % σ/mean) was successfully grown at higher introduced C/Si ratio of about 1.80, which corresponds to surface C/Si ratio higher than 1.0 on the whole wafer. This result was comparable to the film grown at lower introduced C/Si ratio of about 1.35, which corresponds to surface C/Si ratio lower than 1.0 on the whole wafer. On the other hand, the films on 13 wafers successively grown at higher introduced C/Si ratio indicated low fluctuation from 1.85 to 3.09 % (σ/mean), and the short-term repeatability of the in-wafer carrier concentration uniformity of the films grown at higher introduced C/Si ratio was improved compared with the films grown at lower introduced C/Si ratio. Additionally, in-wafer carrier concentration uniformity of the films on 171 wafers grown at higher introduced C/Si ratio showed 75 % quartile of 4.26 % (σ/mean), and this result was greatly superior to that of 8.21 % (σ/mean) for the films on 130 wafers grown at lower introduced C/Si ratio.