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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Investigation of Dislocation Behavior at the Early...

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

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Abstract:

Dislocation behavior during the early stages of physical vapor transport (PVT) growth of 6-inch diameter 4H-SiC crystals has been investigated by synchrotron monochromatic beam X-ray topography (SMBXT) in conjunction with ray tracing simulations of dislocation images. Our studies reveal that most of the TSDs/TMDs are replicated into the newly grown layer while most TEDs are generated by either nucleation in pairs at the growth interface or by redirection of BPDs in the seed crystal. Most BPDs in the newly grown layer are of screw type with and this has been verified by comparison with ray tracing simulated images. TEDs with same and opposite sign of Burgers vector are found to be deflected on to the same basal plane by the overgrowth of macro-steps and they glide in the same and opposite directions respectively. TMDs deflected on to the basal plane by macro-steps get dissociated into c and a components, with the a segment undergoing glide to form V-shaped configurations.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

44-50

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.44

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Online since:

July 2020

Authors:

Tuerxun Ailihumaer*, Balaji Raghothamachar, Michael Dudley, Gilyong Chung, Ian Manning, Edward Sanchez

Keywords:

4H-SiC Crystal, Dislocations, PVT Growth, Ray Tracing Simulation, Synchrotron X-Ray Topography

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Matsunami, T. Kimoto, Step-controlled epitaxial growth of SiC: High quality homoepitaxy, Mater. Sci. Eng. R 20 (1997) 125-166.

DOI: 10.1016/s0927-796x(97)00005-3

[2] H. Matsunami: Jpn. J. Appl. Phys. 43 (2004) 6835.

[3] St. G. Muller, J. J. Sumakeris, M. F. Brady, R. C. Glass, H. M. Hobgood, J. R. Jenny, R. Leonard, D. P. Malta, M. J. Paisley, A. R. Powell, V. F. Tsvetkov, S. T. Allen, M. K. Das, J. W. Palmour, and C. H. Carter, Jr., Eur. Phys. J. Appl. Phys. 27 (2004) 29.

DOI: 10.1051/epjap:2004085

[4] R. Singh and M. Pecht, IEEE Ind Electron M 2 (2008) 19.

[5] H. Wang, F. Wu, Y. Yang, J. Guo, B. Raghothamachar, M. Dudley, J. Zhang, G. Chung, B. Thomas, E. K. Sanchez, S. G. Mueller, D. Hansen and M. J, Loboda, ECS Transactions, 64 (7)(2014)145-152.

DOI: 10.1149/06407.0145ecst

[6] F. Wu, M. Dudley, H. Wang, S.Byrapa, S.Sun, B.Raghothamachar, E.Sanchez, G.Chung, D.M Hansen, S.G. Mueller, M.J. Loboda, Mater. Sci. Forum 740 (2013) 217-220.

DOI: 10.4028/www.scientific.net/msf.740-742.217

[7] S.Byrapa, F.Wu, H.Wang, B.Raghothamachar, G.Choi, S.Sun, M.Dudley, E.K. Sanchez, D.Hansen, R.Drachev, S.G. Muller and M. Lobona, Mater. Sci. Forum 717 (2012) 347-350.

DOI: 10.4028/www.scientific.net/msf.717-720.347

[8] M. Dudley, F.Wu, H.Wang, S.Byrappa, B.Raghothamachar, G.Choi, S.Sun, E.K. Sanchez, D.Hansen, R.Drachev S.G. Mueller, M.Loboda, Appl. Phys. Lett. 98 (2011) 232110.

DOI: 10.1063/1.3597226

[9] H. Wang,F. Wu,S. Byrappa,S. Sun, B. Raghothamachar,M. Dudley,E. K. Sanchez,D. Hansen,R. Drachev,S. G. Mueller,and M. J. Loboda, Appl. Phys. Lett. 100 (2012) 172105.

DOI: 10.1063/1.4704679

[10] S.Kawashini, M.Kamiko, T.Yoshikawa, Y.Mitsuda and K.Morita, Crys. Growth Des. 16 (2016) 4822-4830.

[11] S.Harada, Y.Yamamoto, S.Xiao, D.Koike, T.Mutoh, K.Murayama, K.Aoyagi, T.Sakai, M.Tagawa and T.Ujihara, Mater. Sci. Forum 821-823 (2015) 3-8.

DOI: 10.4028/www.scientific.net/msf.821-823.3

[12] C.Ohshige, T.Takahashi, N.Ohtani, M.Katsuno, T.Fujitomo, S.Sato, H.Tsuge, T.Yano, H.Matsuhata, M.Kitabatake, J.Cryst.Growth 408 (2014) 1-6.

DOI: 10.4028/www.scientific.net/msf.821-823.90

[13] N.Ohtani, C.Ohshige, M.Katsuno, T.Fujitomo, S.Sato, H.Tsuge, W.Ohashi, T.Yano, H.Matsuhata and M.Kitabatake, J.Cryst.Growth 386 (2014) 9-15.

DOI: 10.1016/j.jcrysgro.2013.09.026

[14] M. Dudley, X. R. Huang, W. Huang, A. Powell, S. Wang, P. Neudeck, and M. Skowronski, Appl. Phys. Lett. 75 (1999) 784.

DOI: 10.1063/1.124512

[15] S.Byrappa, F.Wu, H.Wang, B.Raghothamachar, G.Choi, S.Sun, M.Dudley, E.Sanchez, D.Hansen, R.Drachev, S.Muller and M.Lobona, Mater.Sci.Forum 717-720 (2012) 347-350.