Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

Abstract:

The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 37-43
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.37
• Online since: July 2020
• Authors: Ian Manning*, Yusuke Matsuda, Gilyong Chung, Edward Sanchez, Michael Dudley, Tuerxun Ailihumaer, Balaji Raghothamachar
• Keywords: 4H SiC, Elastic Modulus, Growth Rate, Internal Stress, KOH Etching, Nanoindentation, Resistivity, Wafer Bow, Wafer Warp, X-Ray Topography

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