Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker

Abstract:

This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being much lower compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DCbreaker, it is essential to evaluate the destructive endurance for UIS test.This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC-MOSFETs under the degradation at repetitive UIS test.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 1010-1015
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.1010
• Online since: July 2020
• Authors: Mitsuhiko Sagara*, Keiji Wada, Shin-Ichi Nishizawa
• Keywords: Reliability, Repetitive Unclamped Inductive Switching (UIS) Test, SiC-MOSFET, Solid State Circuit Breaker

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