The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter

Heng Lee; Chun Kai Liu; Tao Chih Chang

doi:10.4028/www.scientific.net/MSF.1004.1045

Paper Titles

High-Performance SIP Half-Bridge IPM Based on 35mΩ/1200V SiC Stack-Cascode
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Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging
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Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics
p.1027

High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs
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The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter
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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)
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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs
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Impact of Proton Irradiation on Power 4H-SiC MOSFETs
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Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier
p.1081

HomeMaterials Science ForumMaterials Science Forum Vol. 1004The Study of Comparative Characterization between...

The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter

Abstract:

This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

1045-1053

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.1045

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Online since:

July 2020

Authors:

Heng Lee*, Chun Kai Liu, Tao Chih Chang

Keywords:

Power Loss, Power Module, SiC MOSFET, Si-IGBT, Three Phase SPWM Inverter, Wide Bandgap (WBG)

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