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Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging
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High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs
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The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter
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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)
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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs
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Impact of Proton Irradiation on Power 4H-SiC MOSFETs
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Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Towards Making SiC ICs Durable and Accessible for...

Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

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Abstract:

The prospects for beneficial application of integrated circuit (IC) capabilities in ambient environments above 450 °C have been significantly improved by recent long-term demonstrations of SiC chips and packaging by NASA Glenn Research Center. This invited paper reviews and updates development of durable SiC IC technology aspects relevant to engineering infusion into beneficial applications, including the first long-duration low-mass Venus lander missions

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Silicon Carbide and Related Materials 2019

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

1057-1065

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.1057

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Online since:

July 2020

Authors:

Philip G. Neudeck*, David J. Spry

Keywords:

High Temperature, Integrated Circuit (IC), JFET, Packaging, Radiation, Venus

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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