Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs

Peter Alexandrov; Matt O'Grady

doi:10.4028/www.scientific.net/MSF.1004.1097

Paper Titles

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs
p.1066

Impact of Proton Irradiation on Power 4H-SiC MOSFETs
p.1074

Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier
p.1081

Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure
p.1088

Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs
p.1097

Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV Detectors
p.1104

Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
p.1109

High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET
p.1115

Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
p.1123

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Extreme Environment Integrated Circuits Based on...

Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs

Abstract:

This paper presents results on developing high temperature capable SiC JFET based IC technology that can operate at temperatures up to 500 °C. All JFET devices are fully planar, formed by ion implantation, and the device design allows the use of semi-insulating or conductive SiC substrates. Basic analog and logic ICs were built in order to demonstrate the technology high temperature capability. All circuits used enhancement mode n-channel JFETs as active transistors, and depletion mode transistors as active loads. The logic circuits built included NOT, NAND, and NOR gates. The analog circuits built included a simple one-stage operational amplifier. JFETs and ICs were packaged in ceramic packages and tested at temperatures up to 500 °C.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

1097-1103

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.1097

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Online since:

July 2020

Authors:

Peter Alexandrov*, Matt O'Grady

Keywords:

High Temperature, Integrated Circuit (IC), JFET, SiC

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