Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV Detectors

Abstract:

The effect of irradiation by protons with an energy of 15 MeV with fluences of (1-40)٠10¹² cm^-2 on the spectral characteristics of UV 4H-SiC photodetectors was considered. Photodiodes with Schottky barriers were formed by thermal vacuum sputtering with a thickness of 20 nm and a diameter of 8 mm on 4H-SiC structures with CVD epitaxial layers with a concentration of uncompensated donors N_d-N_a=(1-4)٠10¹⁴ cm^-3 grown on n⁺-4H-SiC substrates. UV photodetectors withstand irradiation by protons with a fluences of 4٠10¹³ cm^-2 with a photosensitivity improvement due to the gettering of simple radiation defects by localized cluster and amorphous areas, and partial structural improvement of the irradiated material. Irradiation of photodetectors by 15 MeV protons with a fluence of 4٠10¹² cm^-2 at a temperature of 200⁰ C led to an increase in quantum efficiency compared to samples irradiated in similar modes at 25⁰ C due to an additional defective rearrangement.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 1104-1108
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.1104
• Online since: July 2020
• Authors: Evgenia V. Kalinina*, Alexander A. Lebedev, Vitalii V. Kozlovski, Vladimir Zabrodski, Andrei Nikolaev, Maxim Z. Shvarts, Svetlana Levina
• Keywords: Irradiation, Photodetector, Protons, Quantum Efficiency, Radiation Defects, Temperature

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