Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs

Abstract:

To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. An 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse switching test were successfully demonstrated. Moreover, switching tests of 2nd generation MOSFET that has a twice larger device area was conducted. As a result, 60 % reduction of on-resistance was confirmed.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 1141-1147
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.1141
• Online since: July 2020
• Authors: Katsuya Okamura*, Fujio Naito, Ken Takayama, Hidenori Kitai, Hisato Michikoshi, Kunihiro Sakamoto, Akira Tokuchi, Tatsuya Kaito, Daiki Kumamoto
• Keywords: High-Voltage, MOSFET, Pulsed Power

References

[1] K. Okamura et al., Development of a Semiconductor Switch for High Power Copper Vapor Lasers, in Proc. 11th IEEE International Pulsed Power Conference, Baltimore, Maryland USA, pp.975-980, June-Jul. (1997).

DOI: 10.1109/ppc.1997.674520

[2] K. Okamura et al., Development of IEGT Switch for a Klystron Modulator,, in Proc. 25th Lin. Acc. Meeting in Japan, Himeji, Japan, pp.243-245, Jul. (2000).

[3] K. Shenai et al., Optimum semiconductors for high-power electronics,, IEEE Trans. Electron Devices, vol. 36, no. 9, pp.1811-1823, Sep. (1989).

DOI: 10.1109/16.34247

[4] Wolfspeed, https://www.wolfspeed.com/power/products/sic-mosfets.

[5] ROHM, https://www.rohm.com/products/sic-power-devices/sic-power-module.

[6] T. Takayanagi et al., Development of a New Pulsed Power Supply with The SiC-MOSFET", in Proc. IPAC ,17, Copenhagen, Denmark, May 2017, pp.3412-3414.

[7] H. Kitai et al., Low on -Resistance and Fast Switching of 13-kV SiC MOSFETs with Optimized Junction Field-Effect Transistor Region,, in Proc. The 29th Int. Symp. On Power Semiconductor Devices & ICs, Sapporo, Japan, May-June 2017, pp.343-346.

DOI: 10.23919/ispsd.2017.7988982