Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs

Xiang Zhou; Collin W. Hitchcock; Poonman Tang; I. Bhat; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.1004.614

Paper Titles

Profiling with Depth Resolution of Sub-nm for SiO₂/ SiC Interface by Dual-Beam TOF-SIMS Combined with Simulation
p.587

Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N₂ Annealing with Conductance Measurements
p.595

Photo-Assisted Corona-Charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-V
p.601

Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations
p.608

Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs
p.614

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement
p.620

Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device Simulation
p.627

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique
p.635

Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs
p.642

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Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs

Abstract:

We have characterized gate capacitive and conductive behaviors of commercial Si and 4H-SiC vertical MOSFETs that have never been reported previously. The characteristics and possible physical reasons are determined and corroborated with device simulations. The measurements were carried out on different 1200V 4H-SiC MOSFETs from several vendors by impedance analyzer. Typical C-V characteristics of gate-controlled diodes are observed in those MOSFETs, while several conductance peaks are also captured in G-V measurements. These conductance peaks, reproduced with numerical simulations, are not necessarily related to the behavior of any interface states at the gate oxide/ 4H-SiC interface.