Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT

Abstract:

In this study, to demonstrate the potential of the SiC-IGBT for high voltage application, we fabricated 13 kV class SiC-IGBT, and evaluated static characteristics and the ruggedness. The on-state forward voltage of 5.2 V at a collector current density of 100 A/cm² was obtained, and the breakdown voltage of 13.7 kV was achieved. Successful evaluation of SCSOA was obtained under the collector voltage of 4.6 kV, and utilizing the optimized layout with low saturation current, we realized the increase of the short circuit time. RBSOA turn-off was successfully achieved without any breakdown by latch up mode under the collector voltage of 4.0 kV and current density of 900 A/cm².

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 905-910
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.905
• Online since: July 2020
• Authors: Kazuya Konishi*, Kenji Hamada, Hiroaki Okabe, Yusuke Miyata, Hiroki Niwa, Kohei Ebihara, Koutarou Kawahara, Naoyuki Kawabata, Shingo Tomohisa, Naruhisa Miura
• Keywords: IGBT, Ruggedness, SOA

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