Common-Drain Bidirectional 1200V SiC MOSFETs

Collin W. Hitchcock; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.1004.882

Paper Titles

SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study
p.850

Improved SiC MOSFET SPICE Model to Avoid Convergence Errors
p.856

Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs
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1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
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Common-Drain Bidirectional 1200V SiC MOSFETs
p.882

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs
p.889

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
p.899

Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT
p.905

Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model
p.911

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Common-Drain Bidirectional 1200V SiC MOSFETs

Common-Drain Bidirectional 1200V SiC MOSFETs

Abstract:

Using commercially available SiC MOSFET dice, bidirectional MOSFETs were assembled and their electrical performance was tested. With proper gate biasing, the pair is capable of blocking at or near the rated value of the component MOSFETs in each direction. The pair conducts in both directions with an on-state resistance comparable to the sum of the constituent device resistances. With optimization of the component devices, this configuration promises to improve bidirectional switch performance beyond that of the simple assembled pair.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

882-888

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.882

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Online since:

July 2020

Authors:

Collin W. Hitchcock*, T. Paul Chow

Keywords:

Bidirectional MOSFET, Bidirectional Switch, Bidirectional Transistor, Common Drain MOSFET, SiC MOSFET

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* - Corresponding Author

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