1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Abstract:

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. The BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 872-881
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.872
• Online since: July 2020
• Authors: Ajit Kanale*, Tzu Hsuan Cheng, Ki Jeong Han, B. Jayant Baliga, Subhashish Bhattacharya, Douglas Hopkins
• Keywords: 4H-SiC, BiDFET, Bi-Directional Switch, Low Voltage Drop, MOSFET, Silicon Carbide

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