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1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

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Abstract:

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. The BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

872-881

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.872

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Online since:

July 2020

Authors:

Ajit Kanale*, Tzu Hsuan Cheng, Ki Jeong Han, B. Jayant Baliga, Subhashish Bhattacharya, Douglas Hopkins

Keywords:

4H-SiC, BiDFET, Bi-Directional Switch, Low Voltage Drop, MOSFET, Silicon Carbide

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] P. W. Wheeler, J. Rodriguez, J. C. Clare, L. Empringham and A. Weinstein, Matrix Converters: A Technology Review,, IEEE Trans. Industrial Electronics, vol. 49, no. 2, pp.276-288, April (2002).

DOI: 10.1109/41.993260

Google Scholar

[2] P. W. Wheeler, J. C. Clare and L. Empringham, A vector controlled MCR Matrix Converter Induction Motor Drive with Minimized Commutation Times and Enhanced Waveform Quality,, Rec. 2002 IEEE Industrial Appl. Conf., pp.466-472, (2002).

DOI: 10.1109/ias.2002.1044127

Google Scholar

[3] M. Takei, Y. Harada and K. Ueno, 600V-IGBT with Reverse Blocking Capability,, Proc. 2001 Int. Symp. On Pwr. Semicond. Dev. & ICs, pp.413-416, (2001).

Google Scholar

[4] B. J. Baliga, Fundamentals of Power Semiconductor Devices,, 2nd Ed., Springer Science, (2019).

Google Scholar

[5] S. Safari, A. Castellazzi, and P. Wheeler, Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter,, IEEE Trans. Power Electronics, vol. 29, no. 5, pp.2584-2596, May (2014).

DOI: 10.1109/tpel.2013.2289746

Google Scholar

[6] H. F. Ahmed, H. Cha, A. A. Khan, J. Kim, and J. Cho, A Single-Phase Buck-Boost Matrix Converter with only Six Switches and without Commutation Problem,, IEEE Trans. Power Electronics, vol. 32, no. 2, pp.1232-1244, February (2017).

DOI: 10.1109/tpel.2016.2553044

Google Scholar

[7] S. Mori, M. Aketa, T. Sakaguchi and T. Kimoto, Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET, in IEEE Int. Symp. On Power Semiconductor Devices and ICs, pp.271-274, (2016).

DOI: 10.1109/ispsd.2016.7520830

Google Scholar

[8] B. J. Baliga and K. Han, Monolithic SiC Bi-Directional Field Effect Transistor (BiDFET): Concept, Implementation and Electrical Characteristics,, Govt. Microcircuit Appl. and Critical Tech Conf., (2018).

Google Scholar

[9] Information on https://www.wolfspeed.com/power/products/bare-die/cpm2-1200-0025b.

Google Scholar

[10] Information on https://www.littelfuse.com/products/power-semiconductors/discrete-igbts/pt/low-frequency/ixgh20n120a3.aspx.

Google Scholar