20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

Akihiro Koyama; Yuji Kiuchi; Tomonori Mizushima; Kensuke Takenaka; Shinichiro Matsunaga; Mitsuru Sometani; Koji Nakayama; Hitoshi Ishimori; Atsuko Kimoto; Manabu Takei; Tomohisa Kato; Yoshiyuki Yonezawa; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.1004.899

Paper Titles

Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs
p.865

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
p.872

Common-Drain Bidirectional 1200V SiC MOSFETs
p.882

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs
p.889

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
p.899

Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT
p.905

Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model
p.911

Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well
p.917

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons
p.923

HomeMaterials Science ForumMaterials Science Forum Vol. 100420 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

Abstract:

We demonstrate 20 kV-class 4H-SiC n-channel implantation and epitaxial (IE)-IGBTs having both low on-state voltage and high blocking characteristics. We fabricated n-IE-IGBTs on a (0001) silicon face with free-standing epitaxial layers. Effective carrier lifetime increased significantly from 0.9 μs to 9.6 μs by a lifetime enhancement process. We used the IE structure to suppress an increase of the surface p⁺-well concentration, reduce implantation damage at the p⁺-well, and reduce junction field effect transistor (JFET) region resistance by ion implantation as a counter doping. The n-IE-IGBT at 100 A/cm²on-state voltage and specific differential on-resistance was 8.2 V and 36.9 mΩcm², respectively, at room temperature with a 30 V gate voltage. The blocking voltage was 26.8 kV at 45.7 μA.