Identification of High Resolution Transient Thermal Network Model for Power Module Packages

Shuhei Fukunaga; Tsuyoshi Funaki

doi:10.4028/p-90gl36

Paper Titles

Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing
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Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
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Estimation of Activation and Compensation Ratios in Al⁺ Ion Implanted 4H-SiC: Comparison of Two Methodologies
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Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
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Identification of High Resolution Transient Thermal Network Model for Power Module Packages
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Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends
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Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
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Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
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Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Identification of High Resolution Transient...

Identification of High Resolution Transient Thermal Network Model for Power Module Packages

Abstract:

A transient thermal network model is utilized to design and evaluate the transient thermal characteristics of power modules. Static test method identifies the transient thermal network model from the time response of the junction temperature, which is obtained by using the temperature dependency of I-V characteristics for power devices. This paper experimentally evaluates the effect of the sampling frequency and the resolution of the AD conversion on the accuracy of the obtained transient thermal network model. The high sampling frequency and the high resolution in the obtained time response of the junction temperature enable to clearly identify the transient thermal network model of the power module with the direct bonding copper substrate.

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