Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method

Yoshitaka Nishihara; Koji Kamei; Daisuke Shiomi; Kenji Momose

doi:10.4028/p-224t76

Paper Titles

Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
p.246

Identification of High Resolution Transient Thermal Network Model for Power Module Packages
p.253

Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends
p.258

Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
p.263

Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
p.268

Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation
p.273

Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection
p.278

Automatic Image Analysis of Stackingfault
p.283

Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures
p.288

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Evaluation of Defects in a SiC Substrate Using the...

Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method

Abstract:

Photoluminescence (PL) imaging provide defect and dislocation characteristics not only in a 4H silicon carbide (SiC) epilayer but also in a substrate. In this work, to detect a large-pit or a bar-shaped stacking fault (BSF) before epilayer growth, we employed PL under various detection conditions. A large-pit was detected as a dark spot on a 4H-SiC substrate due to dislocations orthogonal to a micropipe. The BSF was clearly observed as a bright rectangle by tuning the observation conditions. The finding indicates that device killing defects or dislocations should be detected as soon as possible and thus improve the yield.

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