Automatic Image Analysis of Stackingfault

Annamaria Muoio; Cristiano Calabretta; Viviana Scuderi; Massimo Zimbone; Francesco La Via

doi:10.4028/p-ad93l3

Paper Titles

Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
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Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
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Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation
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Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection
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Automatic Image Analysis of Stackingfault
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Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures
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Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis
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Microscopic Evaluation of Al₂O₃/p-Type Diamond (111) Interfaces Using Scanning Nonlinear Dielectric Microscopy
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Measurement of Dislocation Density in SiC Wafers Using Production XRT
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Automatic Image Analysis of Stackingfault

Automatic Image Analysis of Stackingfault

Abstract:

3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.

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Silicon Carbide and Related Materials 2021

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

283-287

DOI:

https://doi.org/10.4028/p-ad93l3

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Online since:

May 2022

Authors:

Annamaria Muoio*, Cristiano Calabretta, Viviana Scuderi, Massimo Zimbone, Francesco La Via

Keywords:

Image Segmentation, SiC, Stacking Fault

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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