Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Alina Muravitskaya; Anna Rumyantseva; Atse Julien Eric Ndohi; Camille Sonneville; Dominique Planson; Pierre Michel Adam; Sylvain Potiron; Mihai Lazar

doi:10.4028/p-5p0qg2

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Automatic Image Analysis of Stackingfault
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Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures
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Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis
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Microscopic Evaluation of Al₂O₃/p-Type Diamond (111) Interfaces Using Scanning Nonlinear Dielectric Microscopy
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Enhanced Resonant Raman Scattering of GaN...

Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Abstract:

In order to selectively analyze active thin layers close to surface in power devices structures, Raman scattering is necessary with UV excitation. However, the Raman spectra of GaN are usually affected by the direct bandgap photoluminescence of the material, which interferes with the Raman measurements and decreases the quality and resolution of the Raman spectra. In this work, we demonstrate experimentally that nanostructured aluminum films deposed on GaN epitaxial layers decrease the influence of the photoluminescence on the resonant Raman spectra and increase its overall spatial resolution under UV illumination.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

293-297

DOI:

https://doi.org/10.4028/p-5p0qg2

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Cite this paper

Online since:

May 2022

Authors:

Alina Muravitskaya, Anna Rumyantseva, Atse Julien Eric Ndohi, Camille Sonneville, Dominique Planson, Pierre Michel Adam, Sylvain Potiron, Mihai Lazar*

Keywords:

GaN, Nanostructures, Plasmonic Nanoparticles, Power Device, Raman Scattering, SERS, SiC, Thin Layers

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Creative Commons CC BY 4.0

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* - Corresponding Author

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