Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures

Abstract:

The inversion channel electron mobility in 4H-SiC MOSFETs with NO annealed gate oxides is still well below its theoretical limit. The physical reason behind the reduced mobility is not yet fully established but has for example been attributed to a high density of very fast interface traps close to the conduction band edge. These traps are not detected by high-low CV analysis at room temperature but are observed by conductance spectroscopy at low temperatures. In this study we demonstrate how conventional high-low CV analysis of MOS capacitors at cryogenic temperatures can be applied to detect and quantify these very fast traps.

• Periodical: Materials Science Forum (Volume 1062)
• Pages: 288-292
• DOI: https://doi.org/10.4028/p-8m5zs1
• Online since: May 2022
• Authors: A.M. Vidarsson*, J.R. Nicholls, Daniel Haasmann, Sima Dimitrijev, E.Ö. Sveinbjörnsson
• Keywords: 4H-SiC, Capacitance Analysis, Cryogenic Temperatures, MOS Capacitor, Near-Interface Traps

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