Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
p.235
p.235
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies
p.241
p.241
Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
p.246
p.246
Identification of High Resolution Transient Thermal Network Model for Power Module Packages
p.253
p.253
Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends
p.258
p.258
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
p.263
p.263
Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
p.268
p.268
Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation
p.273
p.273
Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection
p.278
p.278
Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends
Abstract:
Double-rhombic shaped single Shockley stacking faults (1SSFs) were considered to have a converted threading edge dislocation (TED) on the shallower side of the initial basal plane dislocation segments. However, the structural analysis using transmission electron microscopy (TEM) revealed other possible configuration of the double-rhombic 1SSFs expanded from basal plane dislocations (BPDs) of which both ends were connected with two TEDs.
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Periodical:
Materials Science Forum (Volume 1062)
Pages:
258-262
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Online since:
May 2022
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