4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Dominique Planson; Camille Sonneville; Pascal Bevilacqua; Luong Viet Phung; Besar Asllani; Dominique Tournier; Pierre Brosselard

doi:10.4028/p-2ch22f

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HomeMaterials Science ForumMaterials Science Forum Vol. 10624H-SiC PiN Diode Protected by Narrow Field Rings...

4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Abstract:

This paper presents micro-OBIC measurements performed at different voltages on two devices protected by narrow field rings. At the surface of the device #1, a polyimide layer was deposited during the fabrication process. On the contrary, passivation layer was removed on device #2. Thanks to the micro-OBIC micrometer spatial resolution and the spot size carefully focused, small gaps in the range of 1 μm can be visible on OBIC profiles. Thus, the variation of the μ-obic accurately reflects the topology of each ring.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

341-345

DOI:

https://doi.org/10.4028/p-2ch22f

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Online since:

May 2022

Authors:

Dominique Planson*, Camille Sonneville, Pascal Bevilacqua, Luong Viet Phung, Besar Asllani, Dominique Tournier, Pierre Brosselard

Keywords:

4H-SiC Bipolar Diode, Electro-Physical Characterisation, High Voltage Device, OBIC, Periphery Protection

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* - Corresponding Author

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