Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms

Ze Yu Chen; Hong Yu Peng; Yafei Liu; Qian Yu Cheng; Shanshan Hu; Balaji Raghothamachar; Michael Dudley; Reza Ghandi; Stacey Kennerly; Peter Thieberger

doi:10.4028/p-m7sftq

Paper Titles

4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method
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Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials
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Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography
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Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms
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Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC
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Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide
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Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Investigation of Lattice Strain in High Energy...

Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms

Abstract:

4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by the implantation process were characterized in detail by synchrotron rocking curve X-ray topography (SXRCT) and reciprocal space maps (RSMs). It is observed that the strain levels correlate with the atomic mass and energy of acceleration of the dopant atoms.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

361-365

DOI:

https://doi.org/10.4028/p-m7sftq

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Online since:

May 2022

Authors:

Ze Yu Chen*, Hong Yu Peng, Yafei Liu, Qian Yu Cheng, Shanshan Hu, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly, Peter Thieberger

Keywords:

4H-SiC, Ion Implantation, Lattice Strain, Synchrotron X-Ray Rocking Curve Topography

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* - Corresponding Author

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