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Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs

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Abstract:

Recently high-k gate dielectrics for SiC power MOSFETs attracted increasing research interest thanks to promising results related to improved specific channel resistances and threshold voltage stability. We investigated high-k gate stacks for 1.2kV and 3.3kV SiC power MOSFETs regarding on-state performance and stability during high temperature gate bias tests. Furthermore, we studied the high-k/SiC interface quality and the effect of burn-in pulses using SiC MOSCAPs. High-k SiC power MOSFETs show significant improvement in on-state performance and threshold voltage stability. We found that the burn-in pulses can be shorter for high-k gate dielectrics compared to SiO2-based devices.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

383-388

DOI:

https://doi.org/10.4028/p-kc5309

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Online since:

May 2022

Authors:

Lars Knoll*, Giovanni Alfieri, Gianpaolo Romano, Andrei Mihaila, Yulieth Arango, Moritz Wehrle, Vinoth Sundaramoorthy, Stephan Wirths

Keywords:

High Temperature Gate Bias Test, High-K Gate Dielectrics, SiC MOSFET Reliability, SiC Power MOSFET, Threshold Voltage Stability

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* - Corresponding Author

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