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Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-SiС on Silicon

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Abstract:

This paper presents a macro-and nanoscale electrical investigation of Schottky and metal-oxide junctions with hetero-epitaxial 3C-SiC layers grown on Si. Statistical current-density-voltage (J-V) characterization of Pt/3C-SiC Schottky diodes showed an increase of the reverse leakage current with increasing the devices diameters. Furthermore, C-V and J-V analyses of SiO2/3C-SiC capacitors revealed non-idealities of the thermal oxide, such as a high trapped positive charge (3×1012 cm−2) and a reduced breakdown field (EBD=6.5 MV/cm) compared to ideal SiO2. Nanoscale electrical characterizations by conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM) allowed to shed light on the origin of non-ideal behavior of Schottky and thermal oxide junctions, by correlating the morphological features associated to 3C-SiC crystalline defects with local current transport and carrier density.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

400-405

DOI:

https://doi.org/10.4028/p-cl40be

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Online since:

May 2022

Authors:

Filippo Giannazzo*, Patrick Fiorenza, Emanuela Schiliro, Salvatore Di Franco, Sylvain Monnoye, Hugues Mank, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Keywords:

3C-SiC, Conductive Atomic Force Microscopy, MOS, Scanning Capacitance Microscopy, Schottky

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References

[1] H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, N. Hatta, phys. stat. sol. (b) 245, 1272 (2008).

Google Scholar

[2] M. Kobayashi, et al., Mater. Sci. Forum 679-680, 645 (2011).

Google Scholar

[3] F. Li, F. Roccaforte, G. Greco, P. Fiorenza et al., Materials 14, 5831 (2021).

Google Scholar

[4] J. Eriksson, M-H. Weng, F. Roccaforte, F. Giannazzo, et al., Appl. Phys. Lett. 95, 081907 (2009).

Google Scholar

[5] G. Fisicaro, C. Bongiorno, I. Deretzis, F. Giannazzo, et al., Appl. Phys. Rev. 7, 021402 (2020).

Google Scholar

[6] F. Li, Q. et al. IEEE Trans. Electr. Dev., 67, 237 (2020).

Google Scholar

[7] P. Fiorenza, et al. Nanotechnology 31, 125203 (2020).

Google Scholar

[8] F. Giannazzo, et al. Adv. Electron. Mater., 6, 1901171 (2020).

Google Scholar

[9] P. Fiorenza, et al. Appl. Surf. Sci. 526, 146656 (2020).

Google Scholar

[10] M. Zielinski, et al., Mater. Sci. Forum 924, 306 (2018).

Google Scholar

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