Ni/Heavily-Doped 4H-SiC Schottky Contacts

Marilena Vivona; Giuseppe Greco; Salvatore Di Franco; Patrick Fiorenza; Filippo Giannazzo; Antonino La Magna; Fabrizio Roccaforte

doi:10.4028/p-ia5ez8

Paper Titles

Fast Defect Mapping at the SiO₂/ SiC Interface Using Confocal Photoluminescence
p.389

Evaluation of Line-Shape Defect in Epitaxial Wafer
p.395

Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-SiС on Silicon
p.400

A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability
p.406

Ni/Heavily-Doped 4H-SiC Schottky Contacts
p.411

Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing
p.417

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants
p.422

Structural, Electronic and Optical Properties of 6H-SiC and 3C-SiC with the Application in Solar Cell Devices
p.427

Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low V_F
p.435

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Ni/Heavily-Doped 4H-SiC Schottky Contacts

Ni/Heavily-Doped 4H-SiC Schottky Contacts

Abstract:

In this work, we focus on the electrical characterization of Ni Schottky contact on n-type heavily doped (N_D>10¹⁹ cm⁻³) 4H-SiC layer, achieved by P-ion implantation. In particular, the forward current–voltage characterization of Schottky diodes showed a reduced turn-on voltage for the Ni/heavily-doped 4H-SiC if compared to a reference Ni/4H-SiC Schottky contact fabricated under similar conditions but without implant. Moreover, it was observed the predominance of a thermionic-field-emission (TFE) mechanism for the current transport through the interface. From a current-voltage-temperature (I-V-T) study, the temperature-dependence of the Schottky barrier and doping concentration were evaluated, obtaining a reduction of the barrier (from 1.77 to 1.66 eV), while the doping concentration maintains constant around 1.96×10¹⁹ cm^-3. This study provides useful insights for a deeper comprehension of the electrical behavior of Ni contacts and can have possible applications in 4H-SiC Schottky diode technology.