Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low V_F

Abstract:

The 10 kV silicon carbide p-channel insulated gate bipolar transistors (IGBTs) with low forward voltage drop (V_F) have been fabricated and characterized successfully. The novel edge termination structure of Four-Region Multistep Field Limiting Rings (FRM-FLRs) and the optimum JFET region design proposed in our previous work is adopted to improve the blocking performance and the on-state characteristics. The fabricated device with a chip size of 6 mm × 6 mm and an active area of 0.16 cm² exhibits a high blocking voltage of -10 kV with a small leakage current below -200 nA. Meanwhile, a low forward voltage drop of -8 V at the collector current of -10 A with a gate bias of -20 V is obtained at room temperature, corresponding to a current density of 62.5 A/cm². Besides, a lower gate leakage current is measured less than 2 nA at the gate voltage of -30 V. Experimental results demonstrate that a better trade-off between the blocking voltage and the on-state characteristics is achieved for the fabricated device, which is desirable for the high power applications.

• Periodical: Materials Science Forum (Volume 1062)
• Pages: 435-441
• DOI: https://doi.org/10.4028/p-9p5o07
• Online since: May 2022
• Authors: Xiao Li Tian*, Cheng Zhan Li, Yu Yang, Wang Feng, Jiang Lu, Chang Wei Zheng, Cheng Yue Yang, Yun Bai, Xin Yu Liu
• Keywords: 4H-SiC, Forward Voltage Drop, High Voltage, IGBT

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