Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation

Zimo Yuan; Keijo Jacobs; Mietek Bakowski; Per Ranstad; Adolf Schöner; Sergey Reshanov; Wlodek Kaplan; Hans Peter Nee; Anders Hallén

doi:10.4028/p-5po40a

Paper Titles

Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing
p.417

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants
p.422

Structural, Electronic and Optical Properties of 6H-SiC and 3C-SiC with the Application in Solar Cell Devices
p.427

Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low V_F
p.435

Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation
p.442

Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs
p.447

Self-Turn-On Phenomenon of SiC MOSFETs by Fast Switching Operation
p.452

Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applications
p.458

Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout
p.463

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Localized Lifetime Control of 10 kV 4H-SiC PiN...

Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation

Abstract:

In this paper, proton implantation with different combinations of MeV energies and doses from 2×10⁹ to 1×10¹¹ cm^-2 is used to create defects in the drift region of 10 kV 4H-SiC PiN diodes to obtain a localized drop in the SRH lifetime. On-state and reverse recovery behaviors are measured to observe how MeV proton implantation influences these devices and values of reverse recovery charge Q_rr are extracted. These measurements are carried out under different temperatures, showing that the reverse recovery behavior is sensitive to temperature due to the activation of incompletely ionized p-type acceptors. The results also show that increasing proton implantation energies and fluencies can have a strong effect on diodes and cause lower Q_rr and switching losses, but also higher on-state voltage drop and forward conduction losses. The trade-off between static and dynamic performance is evaluated using Q_rr and forward voltage drop. Higher fluencies, or energies, help to improve the turn-off performance, but at a cost of the static performance.

By email View Pdf

You have full access to the following eBook

Silicon Carbide and Related Materials 2021

Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

442-446

DOI:

https://doi.org/10.4028/p-5po40a

Citation:

Cite this paper

Online since:

May 2022

Authors:

Zimo Yuan*, Keijo Jacobs, Mietek Bakowski, Per Ranstad, Adolf Schöner, Sergey Reshanov, Wlodek Kaplan, Hans Peter Nee, Anders Hallén

Keywords:

Proton Implantation, Reverse Recovery, Shockley-Read-Hall (SRH) Lifetime, Switching Losses

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] K. Jacobs, Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters', PhD dissertation, KTH Royal Institute of Technology, Stockholm, 2020. (Retrieved from http://urn.kb.se/resolve,urn=urn:nbn:se:kth:diva-284797).

Google Scholar

[2] P. Hazdra, S. Popelka, A. Schöner, Local Lifetime Control in 4H-SiC by Proton Irradiation, Materials Science Forum, vol. 924, Trans Tech Publications, Ltd., June 2018, p.436–439. Crossref,.

DOI: 10.4028/www.scientific.net/msf.924.436

Google Scholar

[3] M. Bakowski et al., Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply,, in IEEE Transactions on Electron Devices, vol. 62, no. 2, pp.366-373, Feb. 2015,.

DOI: 10.1109/ted.2014.2361165

Google Scholar

[4] Stopping and range of ions in matter SRIM-2013, downloadable from http://www.srim.org/.

Google Scholar

[5] C. Darmody and N. Goldsman, Incomplete ionization in aluminium-doped 4H-silicon carbide,, J. Appl. Phys. 126, 145701 (2019).

DOI: 10.1063/1.5120707

Google Scholar