Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (&gt; 1MeV) Implants

Collin Hitchcock; Reza Ghandi; Peter Deeb; Stacey Kennerly; Mohamed Torky; T. Paul Chow

doi:10.4028/p-tqug9l

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Aluminum Acceptor Ionization Energies in 4H-SiC...

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

Abstract:

MeV level aluminum implants into 4H-SiC were performed as part of superjunction diode fabrication. Measurement of resistance test structures produced resistivities well above expected values with large decreases at elevated temperatures. Capacitance-voltage measurements indicate a high activation rate of the implanted aluminum. Temperature dependent Hall measurements produce reasonable hole mobilities with acceptor ionization energies of approximately 330meV, well above the 200meV expected for low concentration aluminum doping in 4H-SiC.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

422-426

DOI:

https://doi.org/10.4028/p-tqug9l

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Online since:

May 2022

Authors:

Collin Hitchcock*, Reza Ghandi, Peter Deeb, Stacey Kennerly, Mohamed Torky, T. Paul Chow

Keywords:

Aluminum Acceptor Ionization Energy, Aluminum Activation, Capacitance-Voltage, Incomplete Ionization, Superjunction Diode, Temperature Dependent Hall Effect

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