Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs

Takaaki Tominaga; Toshiaki Iwamatsu; Yukiyasu Nakao; Hiroyuki Amishiro; Hiroshi Watanabe; Naruhisa Miura; Satoshi Yamakawa; Shuhei Nakata

doi:10.4028/p-0uk0j4

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Impact of Recovery Characteristics on Switching...

Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs

Abstract:

The influence of the recovery characteristics on the switching behavior of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with different switching speeds was investigated. A comparative analysis of the devices with different recovery characteristics revealed an increase in the turn-on loss (E_on) owing to the higher output capacitance charge (Q_oss) and reverse recovery charge (Q_rr) in the recovery arm. On the other hand, a higher Q_oss in the recovery arm resulted in a lower turn-off loss (E_off). In addition, an increase in Q_oss and Q_rr further influenced E_on and E_off at a higher switching speed. Furthermore, a higher Q_rr observed at a higher switching speed indicated a more significant impact of Q_rr on E_on at a high switching speed than that of Q_oss. The findings clarified in this study highlight the necessity of focusing the recovery characteristics to ensure a desirable switching loss of SiC MOSFETs.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

447-451

DOI:

https://doi.org/10.4028/p-0uk0j4

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Online since:

May 2022

Authors:

Takaaki Tominaga*, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Naruhisa Miura, Satoshi Yamakawa, Shuhei Nakata

Keywords:

Loss, MOSFET, Recovery, SBD, Switching

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* - Corresponding Author

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