Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K

Siva Kotamraju; Pavan Vudumula

doi:10.4028/p-c6r9il

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Visualization of Interface Trap Distribution for...

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO₂/6H-SiC MOS Capacitors at 700 K

Abstract:

Comparison of C-V characteristics and interface trap distribution for 6H-SiC MOS capacitor with AlN and HfO₂ as high-k dielectric are presented. It is observed that the transition from accumulation to inversion requires a small change in gate voltage for HfO₂ compared to AlN. Furthermore, larger shift in flat band voltage with respect to frequency is observed in case of AlN. A larger change in capacitance with respect to voltage and flat band voltage shift with respect to frequency for AlN indicated a poor choice for MOS capacitor compared to HfO₂.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

468-471

DOI:

https://doi.org/10.4028/p-c6r9il

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Online since:

May 2022

Authors:

Siva Kotamraju*, Pavan Vudumula

Keywords:

6H-SiC, Gas Sensing, Interface States, MOS Capacitor

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Creative Commons CC BY 4.0

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* - Corresponding Author

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