Experimental Investigation of a 10 kV-70A Switch with Six SiC-MOSFETs in a Series-Connection Configuration

Cédric Mathieu de Vienne; Pierre Lefranc; Besar Asllani; Pierre Olivier Jeannin; Bruno Lefebvre

doi:10.4028/p-cg93gc

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Experimental Investigation of a 10 kV-70A Switch...

Experimental Investigation of a 10 kV-70A Switch with Six SiC-MOSFETs in a Series-Connection Configuration

Abstract:

In this paper, a prototype of 6 series-connected SiC-MOSFETs for double pulses test purpose is presented. This prototype represents many challenges amongst which the measurements of voltage sharing and the EMI issues due to high dv/dt. High voltage tests are performed up to 8 kV at 65A and voltage balancing, losses and switching speeds are evaluated. Switching speed up to 520 V/ns are recorded.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

472-476

DOI:

https://doi.org/10.4028/p-cg93gc

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Online since:

May 2022

Authors:

Cédric Mathieu de Vienne*, Pierre Lefranc, Besar Asllani, Pierre Olivier Jeannin, Bruno Lefebvre

Keywords:

Series-Connection, SiC-MOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] X. Song, A. Q. Huang, S. Sen, L. Zhang, P. Liu, and X. Ni, 15-kV/40-A FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch,, IEEE Trans. Ind. Appl., vol. 53, no. 6, p.5715–5727, Nov. 2017,.

DOI: 10.1109/tia.2017.2737627

Google Scholar

[2] J. Wang, R. T. H. Li, and H. S. H. Chung, An investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode configuration,, IEEE Trans. Power Electron., vol. 27, no. 5, p.2657–2672, 2012,.

DOI: 10.1109/tpel.2011.2171723

Google Scholar

[3] K. Vechalapu, S. Bhattacharya, and E. Aleoiza, Performance evaluation of series connected 1700V SiC MOSFET devices,, 2015,.

DOI: 10.1109/wipda.2015.7369327

Google Scholar

[4] B. Asllani, H. Morel, L. V. Phung, and D. Planson, 10 kV silicon carbide PiN diodes—from design to packaged component characterization,, Energies, vol. 12, no. 23, p.1–12, 2019,.

DOI: 10.3390/en12234566

Google Scholar

[5] Z. Zeng, X. Zhang, F. Blaabjerg, and L. Miao, Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes,, IEEE Trans. Power Electron., vol. 35, no. 2, p.1866–1881, 2020,.

DOI: 10.1109/tpel.2019.2922246

Google Scholar