Investigation of SiC Thyristors with Varying Amplifying Gate Design

Sigo Scharnholz; Ralf Hassdorf; Dirk Bauersfeld; Bertrand Vergne; Luong Viet Phung; Dominique Planson

doi:10.4028/p-ztr5d7

Paper Titles

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Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules
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Investigation of SiC Thyristors with Varying Amplifying Gate Design
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Investigation of SiC Thyristors with Varying...

Investigation of SiC Thyristors with Varying Amplifying Gate Design

Abstract:

This paper presents experimental 1.2 kV, 10 A SiC thyristors with different amplifying gate design. In contrast to comparative devices (with simple gate) the amplifying gate thyristors show a characteristic snap-back and a higher gate current to trigger. Their gate-anode I-V characteristics comply with the underlying design constraint, regarding the resistances of pilot and main thyristor: (R_P > R_M). Moreover, the turn-on waveforms of well-designed amplifying gate thyristors reveal peak-shaped inversions in the gate current and voltage transients, providing clear evidence of the successive triggering of pilot and main thyristor.

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Silicon Carbide and Related Materials 2021

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

493-497

DOI:

https://doi.org/10.4028/p-ztr5d7

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Online since:

May 2022

Authors:

Sigo Scharnholz*, Ralf Hassdorf, Dirk Bauersfeld, Bertrand Vergne, Luong Viet Phung, Dominique Planson

Keywords:

Amplifying Gate, Device Fabrication, Etched JTE, On-State Characteristic, Thyristor, Turn-On Characteristic

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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