Neutron Detection Study through Simulations with Fluka

Annamaria Muoio; Alessandro Meli; Antonio Trotta; Miriam Parisi; Laura Meda; Francesco La Via

doi:10.4028/p-7027g3

Paper Titles

Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules
p.487

Investigation of SiC Thyristors with Varying Amplifying Gate Design
p.493

Gate Oxide Reliability and V_TH Stability of Planar SiC MOS Technology
p.498

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design
p.504

Neutron Detection Study through Simulations with Fluka
p.509

A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation
p.514

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C
p.519

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
p.523

Multi-Layer High-K Gate Stack Materials for Low D_it 4H-SiC Based MOSFETs
p.528

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Neutron Detection Study through Simulations with...

Neutron Detection Study through Simulations with Fluka

Abstract:

In this work the purpose of the simulations is to optimize a new large volume Silicon Carbide (SiC) detector for 14.1 MeV neutrons. The device has an active thickness obtained by epitaxial growth and an active area of 25 mm². In the first step of the simulations we compare SiC detector performance to Diamond and Silicon detectors, with the same geometric features. In the second step of the simulations we have found the best solution to improve the response of the detector for a fixed epitaxial layer thickness using an overlayer of aniline (C₆H₇N).

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

509-513

DOI:

https://doi.org/10.4028/p-7027g3

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Online since:

May 2022

Authors:

Annamaria Muoio*, Alessandro Meli, Antonio Trotta, Miriam Parisi, Laura Meda, Francesco La Via

Keywords:

Fluka, Neutron Detection, Silicon Carbide

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* - Corresponding Author

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