DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

Abstract:

The development of robust, high-performance integrated circuits (ICs) will enable numerous potential NASA missions of current interest, including long-duration robotic missions exploring the 460°C surface of Venus. Currently, NASA is looking towards SiC-based devices to provide such a solution. However, the current NASA silicon carbide (SiC) JFET device with a channel length of 6 μm (recently fabricated Gen. 11 ICs) limits mission-relevant circuit capabilities. In this study, we combined experiments with simulations to explore two straightforward fabrication strategies (shallow n−and extended n+) to reduce the SiC JFET channel length while maintaining the turn-off behavior needed to realize 500°C circuit operation. COMSOL Multiphysics was used to simulate the transfer characteristics and maximum potential below the gate of a 4H-SiC nJFET at 500°C, and a 1 μm gate length nJFET with turn-off performance comparable to the state-of-the-art is suggested.

• Periodical: Materials Science Forum (Volume 1062)
• Pages: 519-522
• DOI: https://doi.org/10.4028/p-2pm0e2
• Online since: May 2022
• Authors: Mohit R. Mehta*, Philip G. Neudeck, John W. Lawson
• Keywords: COMSOL, Phosphorous Implant, Shallow Nitrogen Implant, Turn-Off Characteristics

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