A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

Abstract:

A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific contact resistivity, down to 2 x 10^-7 Ω.cm². Current flow in the conducting state of Schottky barrier diodes has been successfully suppressed in some implanted layers, with highly V doped samples showing current density values of approximately 1 x 10^-5 Acm^-2 at 10 V. DLTS spectra reveal the presence of germanium and vanadium centers in the respective samples as well as novel peaks which are likely related to the formation of a novel GeN center.

• Periodical: Materials Science Forum (Volume 1062)
• Pages: 523-527
• DOI: https://doi.org/10.4028/p-92w3k6
• Online since: May 2022
• Authors: A. Benjamin Renz*, Oliver James Vavasour, Mathias Rommel, G.W.C. Baker, Peter Michael Gammon, Tian Xiang Dai, Fan Li, Marina Antoniou, Philip Andrew Mawby, Vishal Ajit Shah
• Keywords: 4H-SiC, Epitaxy, Germanium, High-Resistivity, Implantation, Semi-Insulating, Vanadium

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