Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Rosine Coq Germanicus; Kimmo Niskanen; Alain Michez; Niemat Moultif; Wadia Jouha; Olivier Latry; Jerôme Boch; Ulrike Lüders; Antoine D. Touboul

doi:10.4028/p-973n9u

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Electrothermal Modelling and Measurements of Parallel-Connected V_THMismatched SiC MOSFETs under Inductive Load Switching
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Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology
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Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET
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Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Failure Analysis of Atmospheric Neutron-Induced...

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Abstract:

Dealing with electronic devices for high reliability applications in terrestrial environments, neutron-induced Single Event Effects must be investigated. In this paper, the experimental observation of an atmospheric-like neutron-induced Single Event Burnout (SEB) on a packaged commercial SiC power MOSFET is presented after irradiation at ISIS-ChipIr. The effects of the SEB in the electrical properties of the MOSFET are established, and the SiC damaged zone is observed by scanning electron microscopy. Based on this failure analysis at the die level, the distinct stages during the SEB mechanism can be defined. The sensitive volume where the secondary particle deposited enough energy to trigger the SEB mechanism is identified and located inside the SiC n-drift epitaxial layer near the epitaxial layer/substrate junction.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

544-548

DOI:

https://doi.org/10.4028/p-973n9u

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Online since:

May 2022

Authors:

Rosine Coq Germanicus*, Kimmo Niskanen, Alain Michez, Niemat Moultif, Wadia Jouha, Olivier Latry, Jerôme Boch, Ulrike Lüders, Antoine D. Touboul

Keywords:

Failure Analysis, Neutrons, Power MOSFET, Silicon Carbide, Single Event Burnout (SEB)

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* - Corresponding Author

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