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Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

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Abstract:

Dealing with electronic devices for high reliability applications in terrestrial environments, neutron-induced Single Event Effects must be investigated. In this paper, the experimental observation of an atmospheric-like neutron-induced Single Event Burnout (SEB) on a packaged commercial SiC power MOSFET is presented after irradiation at ISIS-ChipIr. The effects of the SEB in the electrical properties of the MOSFET are established, and the SiC damaged zone is observed by scanning electron microscopy. Based on this failure analysis at the die level, the distinct stages during the SEB mechanism can be defined. The sensitive volume where the secondary particle deposited enough energy to trigger the SEB mechanism is identified and located inside the SiC n-drift epitaxial layer near the epitaxial layer/substrate junction.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

544-548

DOI:

https://doi.org/10.4028/p-973n9u

Citation:

Cite this paper

Online since:

May 2022

Authors:

Rosine Coq Germanicus*, Kimmo Niskanen, Alain Michez, Niemat Moultif, Wadia Jouha, Olivier Latry, Jerôme Boch, Ulrike Lüders, Antoine D. Touboul

Keywords:

Failure Analysis, Neutrons, Power MOSFET, Silicon Carbide, Single Event Burnout (SEB)

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* - Corresponding Author

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