Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs

Mohamed Torky; T. Paul Chow

doi:10.4028/p-37r645

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Comparative Performance Evaluation of Conventional...

Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs

Abstract:

We evaluate and compare the static and dynamic performances of four different 4H-SiC power MOSFETs (Conventional DMOS and UMOS, Superjunction (SJ) DMOS and UMOS FETs) from 0.6 to 10kV. The static on-state performance is determined by analytically calculating the specific on-resistance (R_ON_,sp), while the dynamic switching performance is determined by extracting the specific gate charge (Q_G,sp) and switching energy loss per cycle (E_sw,cycle) using 2D device simulations. It has been found that the SJ UMOS FET exhibits at least a 31% (up to 53% at 0.6kV) reduction in the R_ON,sp · Q_G,sp Figure-of-Merit (FoM) compared to the SJ DMOS FET within the breakdown voltage rating range studied.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

565-569

DOI:

https://doi.org/10.4028/p-37r645

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Online since:

May 2022

Authors:

Mohamed Torky*, T. Paul Chow

Keywords:

2D Simulation, DMOSFET, Performance Evaluation, Superjunction, UMOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

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