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Paper Titles
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Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application

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Abstract:

In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

582-587

DOI:

https://doi.org/10.4028/p-xd84zm

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Online since:

May 2022

Authors:

Ben Jones*, Jacob Mitchell, Jon Evans, Finn Monaghan, Mike Jennings, Chris Bolton, Kevin Riddel, Huma Ashraf, Owen James Guy

Keywords:

Automotive, Electric Vehicle, Foundry-Compatible, ICP Etch, Power Device, Reliable, Trench Corner Rounding, Trench Device Simulation, Trench Processing

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] B.J. Baliga, Fundamentals of Power Semiconductor Devices 2nd ed. (Springer, Raleigh, 2008) p.283.

Google Scholar

[2] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology (Wiley, Singapore, 2014) p.312.

Google Scholar

[3] J. Zheng and M. N. Darwish, US Patent No. 8076719 (13th December 2011).

Google Scholar

[4] Information on https://techweb.rohm.com/knowledge/sic/s-sic/04-s-sic/6574.

Google Scholar

[5] H. Oda. et al, Optimizing the SiC plasma etching process for manufacturing power devices (CS MANTECH Conference, Scottsdale, 2015).

Google Scholar

[6] B.J. Baliga, Silicon Carbide Power Devices (B & JO Enterprise, Singapore, 2005) P.328.

Google Scholar

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