Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology

Munaf T. Rahimo; Iulian Nistor; David Green

doi:10.4028/p-u88313

Paper Titles

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C
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A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
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Multi-Layer High-K Gate Stack Materials for Low D_it 4H-SiC Based MOSFETs
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Electrothermal Modelling and Measurements of Parallel-Connected V_THMismatched SiC MOSFETs under Inductive Load Switching
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Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology
p.539

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET
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SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth
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Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
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Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Advanced 1200V SiC MOSFET Concept Based on...

Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology

Abstract:

This paper presents a Singular Point Source MOS (S-MOS) cell concept suitable for SiC MOSFETs targeting low conduction losses, low switching losses and high robustness. The S-MOS concept differs from standard Planar or Trench MOS cells in the manner by which the total channel width per device area is determined. For the proof of concept and device electrical performance evaluation, the paper will provide 2D and 3D TCAD simulations results for 1200V SiC MOSFETs including the S-MOS and reference planar and trench structures.

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Silicon Carbide and Related Materials 2021

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

539-543

DOI:

https://doi.org/10.4028/p-u88313

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Online since:

May 2022

Authors:

Munaf T. Rahimo*, Iulian Nistor, David Green

Keywords:

SiC MOSFET, Static Behavior, Switching Behavior

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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