Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes

Reza Ghandi; Collin Hitchcock; Stacey Kennerly

doi:10.4028/p-b1gfac

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Demonstration of 2kV SiC Deep-Implanted...

Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes

Abstract:

We report successful demonstration of 2kV, SiC super-junction (SJ) PiN diodes formed by deep implantation of Al and N. In our devices, alternating 12μm deep n-type and p-type SJ pillars fabricated on a 10μm pitch and result in a SJ diode with a measured blocking voltage 500V higher than comparable non-SJ diodes. Four activation anneals ranging from 1700 °C to 2000 °C were compared for effectiveness in eliminating post-implant lattice damage, and the optimum anneal condition was identified.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

477-481

DOI:

https://doi.org/10.4028/p-b1gfac

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Online since:

May 2022

Authors:

Reza Ghandi*, Collin Hitchcock, Stacey Kennerly

Keywords:

Activation Anneal, Diode, Silicon Carbide, Superjunction

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Creative Commons CC BY 4.0

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* - Corresponding Author

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