Preface
SmartSiC™ Substrates: A Boon to Drain Metallization Process
p.1
p.1
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
p.7
p.7
HYPREZ Wafering Solutions: A Novel Approach of SiC Wafering Solution
p.13
p.13
Poly-SiC Characterization and Properties for SmartSiC™
p.21
p.21
Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization
p.27
p.27
A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
p.35
p.35
High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
p.43
p.43
Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF6 Plasma with Metal Masks
p.51
p.51
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 1124)
Online since:
August 2024
Сopyright:
© 2024 Trans Tech Publications Ltd. All Rights Reserved
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