Paper Titles

SmartSiC™ Substrates: A Boon to Drain Metallization Process
p.1

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
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HYPREZ Wafering Solutions: A Novel Approach of SiC Wafering Solution
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Poly-SiC Characterization and Properties for SmartSiC™
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Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization
p.27

A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
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High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
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Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF₆ Plasma with Metal Masks
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Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures
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HomeMaterials Science ForumMaterials Science Forum Vol. 1124Application of Advanced Characterization...

Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization

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Abstract:

A review of the specific characterisation techniques developed and customized for SmartSiC™ substrates is given. A focus is made on thermal characterization of this engineered structure as well as its beneficial features with regards to bipolar degradation.

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20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Wafers and Substrates

Info:

Periodical:

Materials Science Forum (Volume 1124)

Pages:

27-34

DOI:

https://doi.org/10.4028/p-Bf6cd7

Citation:

Cite this paper

Online since:

August 2024

Authors:

Alexis Drouin*, Roland B. Simon, Damien Radisson, Walter Schwarzenbach, Marcin Zielinski, Eric Guiot, Enrica Cela, Audrey Chapelle, Hugo Biard

Keywords:

Bipolar Degradation, Characterization, Engineered Substrate, Quality Control Plan, SmartSiC™, Thermal Boundary Resistance, Thermal Simulation, Wafer Bonding

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RIS, BibTeX

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Creative Commons CC BY 4.0

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* - Corresponding Author

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