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HomeMaterials Science ForumMaterials Science Forum Vol. 1124Investigations on the Recovery of the Electrical...

Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures

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Abstract:

SiC-on-Insulator (SiCOI) structures fabricated using the Smart Cut™ technique can be of great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by electrically insulating it from the receiver substrate. In this study, we report the fabrication of such a SiCOI structure using a SiC receiver, as well as its electrical and TEM characterization after high temperature annealing. We highlight a decrease of the transferred layer electrical resistivity with increasing annealing temperature, due to doping reactivation and electron mobility enhancement. After low temperature annealing (1200°C to 1400°C), deep acceptor levels, possibly located in a damaged region near the substrate’s surface, might be responsible of a non negligible electrical compensation. Beyond 1400°C however, the transferred SiC crystal is healed and electron transport is only subjected to shallow nitrogen ionization.

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20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Wafers and Substrates

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Periodical:

Materials Science Forum (Volume 1124)

Pages:

57-65

DOI:

https://doi.org/10.4028/p-yDH8Qb

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Online since:

August 2024

Authors:

Guillaume Gelineau*, Cédric Masante, Emmanuel Rolland, Sophie Barbet, Lucie Corbin, Anne-Marie Papon, Simon Caridroit, Mathieu Delcroix, Stéphanie Huet, Alexandre Moulin, Vladimir S. Prudkovskiy, Nicolas Troutot, Séverin Rouchier, Loic Turchetti, Karine Mony, Julie Widiez

Keywords:

Electrical Characterization, Ion Slicing, Layer Transfer, SiC-on-Insulator (SiCOI), Smart Cut™

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Creative Commons CC BY 4.0

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* - Corresponding Author

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