In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)

Thomas Clausen; Nadine Schüler; Kay Dornich

doi:10.4028/p-qatL4V

Paper Titles

A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
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High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
p.43

Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF₆ Plasma with Metal Masks
p.51

Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures
p.57

Demonstration of SiC-on-Insulator Substrate with Smart Cut™ Technology for Photonic Applications
p.67

A Novel Contactless SiC Wafer Planarization Processing after Mechanical Slicing by Dynamic Thermal Annealing Processes
p.77

Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser
p.85

In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)
p.91

Characterization of Very Thin 3C-SiC Epilayers on Si
p.97

HomeMaterials Science ForumMaterials Science Forum Vol. 1124In-Line Charaterization of HPSI SiC Wafers Using...

In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)

Abstract:

High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal is also proportional to the bulk resistivity, at least for non-compensated 4H-SiC material.

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