Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser

Shotaro Kadoya; Satoru Takahashi; Masaki Michihata; Noboru Ohtani; Kozo Abe; Shunsuke Arimura

doi:10.4028/p-9jmi2P

Paper Titles

A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
p.35

High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
p.43

Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF₆ Plasma with Metal Masks
p.51

Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures
p.57

Demonstration of SiC-on-Insulator Substrate with Smart Cut™ Technology for Photonic Applications
p.67

A Novel Contactless SiC Wafer Planarization Processing after Mechanical Slicing by Dynamic Thermal Annealing Processes
p.77

Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser
p.85

In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)
p.91

Characterization of Very Thin 3C-SiC Epilayers on Si
p.97

HomeMaterials Science ForumMaterials Science Forum Vol. 1124Proposal of Damage-Free SiC Wafer Dicing Using...

Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser

Abstract:

A damage-free SiC wafer dicing method has been strongly required for practical applications of power devices. In this research, we propose water jet guided laser processing as a novel dicing method. Water jet guided laser processing, which uses a high-pressure fine water jet as waveguide, could generate no cracks or dislocations in crystal. In this paper, water jet guided laser grooving quality was evaluated to demonstrate there should be no chippings and basal plane dislocations. Scanning electron microscopic and X-ray topography observations were conducted. The results indicated the superiority of water jet guided laser dicing to a conventional dicing method.

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